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| SI3459DV New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -60 0.310 @ VGS = -4.5 V rDS(on) (W) 0.220 @ VGS = -10 V ID (A) "2.2 "1.9 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 2.85 mm (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b 150 C) Pulsed Drain Current Single Avalanche Current (L = 0.1 mH) Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C ID TA = 70_C IDM IAS PD TJ, Tstg Symbol VDS VGS Limit -60 "20 "2.2 "1.7 "10 -7 2 Unit V A W 1.3 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Lead Notes a. Surface Mounted on FR4 Board. b. t v 5 sec Document Number: 70877 S-49635--Rev. B, 29-Nov-99 www.vishay.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJL Typical Maximum 62.5 Unit _C/W 106 35 2-1 SI3459DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VDS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -48 V, VGS = 0 V VDS = -48 V, VGS = 0 V, TJ = 150_C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -2.2 A VGS = -4.5 V, ID = -1.9 A VDS = -4.5 V, ID = -2.2 A -10 0.190 0.265 4 0.220 0.310 W S -60 V -1 "100 -1 -50 nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = -30 V, RL = 30 W 30 V, ID ^ -1 A, VGEN = -10 V RG = 6 W 1A 10 V, VDS = -30 V VGS = -10 V ID = -2.2 A 30 V, 10 V, 22 7 1.6 1.2 8 12 23 12 16 24 ns 45 25 14 nC C Source-Drain Rating Characteristicsb Continuous Current Pulsed Current Diode Forward Voltagea Source-Drain Reverse Recovery Time IS ISM VSD trr IS = -1.7 A, VGS = 0 V IF = -1.7 A, di/dt = 100 A/ms -0.8 50 -1.7 A -10 -1.2 90 V ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70877 S-49635--Rev. B, 29-Nov-99 SI3459DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 10 thru 5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 10 TC = -55_C 25_C 125_C Vishay Siliconix Transfer Characteristics 6 4V 6 4 4 2 3V 2 0 0 1 2 3 4 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 600 Capacitance r DS(on) - On-Resistance ( W ) 0.5 C - Capacitance (pF) 500 Ciss 400 0.4 VGS = 4.5 V VGS = 10 V 0.2 0.3 300 200 Coss 0.1 100 Crss 0 0 2 4 6 8 10 0 0 10 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 30 V ID = 2.2 A 2.0 1.8 r DS(on) - On-Resistance (W) (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 0 0 2 4 6 8 0.4 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.2 A 8 6 4 2 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70877 S-49635--Rev. B, 29-Nov-99 www.vishay.com S FaxBack 408-970-5600 2-3 SI3459DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.6 On-Resistance vs. Gate-to-Source Voltage 0.5 I S - Source Current (A) TJ = 150_C r DS(on) - On-Resistance ( W ) 0.4 0.3 ID = 2.2 A 0.2 TJ = 25_C 0.1 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 ID = 250 mA 0.4 V GS(th) Variance (V) 20 25 Single Pulse Power 0.2 Power (W) 15 0.0 10 -0.2 5 -0.4 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 106_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70877 S-49635--Rev. B, 29-Nov-99 |
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